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| Back Opto-Switch Transmissive Phototransistor output. Snap-in mounting mechanism for easy mounting and dismounting. Compatible with 1.0-, 1.2- and 1.6-mm-thick PCBs. High resolution with a 0.5-mm-wide aperture. 5-mm-wide slot. Connects to Japan AMP's CT-series connectors. EE-SX1235A-P2 Dimensions Four, R0.5 Post header 175489-3 (Japan AMP) (3) (2) (1) 3 (see note) 0.5 (slit width) Internal Circuit 3A 1C 3.2 (slit width) 2 K, E Optical axis (see note ) Terminal No. A C K, E Name Anode Collector Cathode, Emitter Unless otherwise specified, the tolerances are as shown below. Dimensions 3 mm max. 3 < mm 6 6 < mm 10 10 < mm 18 18 < mm 30 Tolerance 0.3 0.375 0.45 0.55 0.65 Note: The asterisked dimension is specified by datum A only. Recommended Connectors: Japan AMP 173977-3 (insulation displacement-type connector) 175778-3 (crimp-type connector) 179228-3 (crimp-type connector) For recommended mounting holes see EE-SX4235-P2 on page 402 Specifications Absolute Maximum Ratings (Ta = 25C) Item Emitter Forward current Pulse forward current Reverse voltage Detector Collector-Emitter voltage Emitter-Collector voltage Collector current Collector dissipation Ambient temperature Operating Storage Soldering Note: IF IFP VR VCEO VECO IC PC Topr Tstg Tsol Symbol --4V 30 V 5V 20 mA 100 mW (see note) -25C to 95C -40C to 100C --Rated value 50 mA (see note) Refer to the temperature rating chart if the ambient temperature exceeds 25C. Electrical and Optical Characteristics (Ta = 25C) Item Emitter Forward voltage Reverse current Peak emission wavelength Detector Light current Dark current Leakage current Collector-Emitter saturated voltage Peak spectral sensitivity wavelength Rising time Falling time IR P IL ID ILEAK VCE (sat) P tr tf Symbol VF Value 1.2 V typ., 1.5 V max. 0.01 A typ., 10 A max. 940 nm typ. 0.6 mA min., 14 mA max. 200 nA max. --0.1 V typ., 0.4 V max. 850 nm typ. 8 s typ. 8 s typ. IF = 30 mA VR = 4 V IF = 30 mA IF = 20 mA, VCE = 5 V VCE = 10 V, 0 x --IF = 20 mA, IL = 0.3 mA VCE = 5 V VCC = 5 V, RL = 100 , IL = 1 mA VCC = 5 V, RL = 100 , IL = 1 mA Condition Engineering Data Forward Current vs. Collector Dissipation Temperature Rating IF Forward Current vs. Forward Voltage Characteristics (Typical) Collector dissipation Pc (mW) Light Current vs. Forward Current Characteristics (Typical) Ta = 25C VCE = 10 V Forward current I F (mA) Forward current I F (mA) Ta = -30C Ta = 25C Ta = 70C PC Ambient temperature Ta (C) Forward voltage VF (V) Light current I L (mA) Forward current IF (mA) Light Current vs. Collector-Emitter Voltage Characteristics (Typical) Ta = 25C Relative Light Current vs. Ambient Temperature Characteristics (Typical) IF = 20 mA VCE = 5 V Dark Current vs. Ambient Temperature Characteristics (Typical) VCE = 10 V 0x Relative light current I L (%) Light current I L (mA) IF = 50 mA IF = 40 mA IF = 30 mA IF = 20 mA IF = 10 mA Dark current I D (nA) Collector-Emitter voltage VCE (V) Ambient temperature Ta (C) Ambient temperature Ta (C) Response Time vs. Load Resistance Characteristics (Typical) Vcc = 5 V Ta = 25C Sensing Position Characteristics (Typical) IF = 20 mA VCE = 10 V Ta = 25C (Center of optical axis) Response Time Measurement Circuit Input Output 10% 90% Relative light current I L (%) Response time tr, tf ( s) Input VCC Output GND Load resistance RL (k) Distance d (mm) |
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